Si(lll)-Ni interfaces were prepared by deposition of Ni onto Si(lll) held at liquid nitrogen temperature (LNT) and successively heated. We give angle integrated photoemission results (hν=21.2 eV) at LNT and at room temperature as a function of coverage (up to 10 monolayers). We also give photoemission results for bulk Ni2Si and NiSi prepared “in situ” by interdiffusion. The results are discussed in terms of the properties of the products formed in the interface reacted region.

Valence photoemission study of temperature dependent reaction products in Ni-Si interfaces and thin films / I., Abbati; L., Braicovich; B., De Michelis; DEL PENNINO, Umberto; Valeri, Sergio. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 43:(1982), pp. 199-202.

Valence photoemission study of temperature dependent reaction products in Ni-Si interfaces and thin films

DEL PENNINO, Umberto;VALERI, Sergio
1982

Abstract

Si(lll)-Ni interfaces were prepared by deposition of Ni onto Si(lll) held at liquid nitrogen temperature (LNT) and successively heated. We give angle integrated photoemission results (hν=21.2 eV) at LNT and at room temperature as a function of coverage (up to 10 monolayers). We also give photoemission results for bulk Ni2Si and NiSi prepared “in situ” by interdiffusion. The results are discussed in terms of the properties of the products formed in the interface reacted region.
1982
43
199
202
Valence photoemission study of temperature dependent reaction products in Ni-Si interfaces and thin films / I., Abbati; L., Braicovich; B., De Michelis; DEL PENNINO, Umberto; Valeri, Sergio. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 43:(1982), pp. 199-202.
I., Abbati; L., Braicovich; B., De Michelis; DEL PENNINO, Umberto; Valeri, Sergio
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/761471
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