Si(lll)-Ni interfaces were prepared by deposition of Ni onto Si(lll) held at liquid nitrogen temperature (LNT) and successively heated. We give angle integrated photoemission results (hν=21.2 eV) at LNT and at room temperature as a function of coverage (up to 10 monolayers). We also give photoemission results for bulk Ni2Si and NiSi prepared “in situ” by interdiffusion. The results are discussed in terms of the properties of the products formed in the interface reacted region.
Valence photoemission study of temperature dependent reaction products in Ni-Si interfaces and thin films / I., Abbati; L., Braicovich; B., De Michelis; DEL PENNINO, Umberto; Valeri, Sergio. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 43:(1982), pp. 199-202.
Valence photoemission study of temperature dependent reaction products in Ni-Si interfaces and thin films
DEL PENNINO, Umberto;VALERI, Sergio
1982
Abstract
Si(lll)-Ni interfaces were prepared by deposition of Ni onto Si(lll) held at liquid nitrogen temperature (LNT) and successively heated. We give angle integrated photoemission results (hν=21.2 eV) at LNT and at room temperature as a function of coverage (up to 10 monolayers). We also give photoemission results for bulk Ni2Si and NiSi prepared “in situ” by interdiffusion. The results are discussed in terms of the properties of the products formed in the interface reacted region.
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