The room-temperature growth of bismuth on the InAs(110) surface and the Bi(1 x 1) and Bi-(1 x 2) ordered phases have been studied by means of high-resolution ultraviolet photoemission and high-resolution electron-energy-loss spectroscopy A modified Stransky-Krastanov growth mode at room temperature and the stability of the (1 x 2)-symmetry phase in the 480-580 K annealing temperature range are deduced by quantitative analysis of the core-level data and Auger spectra. A Bi 5d and In 4d core-level analysis is presented, and discussed according to a recently proposed model for the (1 x 2) overlayer reconstruction. The formation of Bi-derived electronic states has been followed during the growth of the (1 x 1)-symmetry phase, showing a semiconducting behaviour at the monolayer coverage, with a well-defined gap stare at 0.39 eV binding energy related to the Bi p-like dangling bonds. The (1 x 2)-Bi phase is metallic, as indicated by the well-defined Fermi edge and by the metallic-like quasi-elastic peak tail in the energy-loss spectra. The metallicity and the electronic structure of the (1 x 2)-Bi phase are discussed in relation to the available geometric structure.
|Anno di pubblicazione:||1999|
|Titolo:||A high-resolution spectroscopy study on bidimensional ordered structures: the (1x1) and(1x2) phases of Bi/InAs(110)|
|Autore/i:||De Renzi V; Betti MG; Corradini V; Fantini P; Martinelli V; Mariani C|
|Codice identificativo ISI:||WOS:000083162500004|
|Codice identificativo Scopus:||2-s2.0-0009739906|
|Tipologia||Articolo su rivista|
File in questo prodotto:
I documenti presenti in Iris Unimore sono rilasciati con licenza Creative Commons Attribuzione - Non commerciale - Non opere derivate 3.0 Italia, salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris