We examined the structural properties of Si layers embedded in GaAs and AlAs-GaAs structures by means of X-ray diffraction and transmission electron microscopy to identify growth parameters for the synthesis of Si-GaAs superlattices. We find that localized pseudomorphic Si layers can be obtained by molecular beam epitaxy at 500-540-degrees-C up to a thickness of 7-8 monolayers. Fifteen period Si-GaAs(001) superlattices involving Si layers 2-3 monolayer thick were then synthesized using the same growth parameters. X-ray diffraction measurements and Raman spectroscopy studies confirm that pseudomorphic growth and relatively abrupt interfaces were achieved.
Si-GaAs(001) superlattice structure / Sorba, Lucia; G., Bratina; A., Franciosi; L., Tapfer; G., Scamarcio; V., Spagnolo; A., Migliori; P., Merli; Molinari, Elisa. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - STAMPA. - 127:(1993), pp. 121-125. [10.1016/0022-0248(93)90590-S]
Si-GaAs(001) superlattice structure
SORBA, Lucia;MOLINARI, Elisa
1993
Abstract
We examined the structural properties of Si layers embedded in GaAs and AlAs-GaAs structures by means of X-ray diffraction and transmission electron microscopy to identify growth parameters for the synthesis of Si-GaAs superlattices. We find that localized pseudomorphic Si layers can be obtained by molecular beam epitaxy at 500-540-degrees-C up to a thickness of 7-8 monolayers. Fifteen period Si-GaAs(001) superlattices involving Si layers 2-3 monolayer thick were then synthesized using the same growth parameters. X-ray diffraction measurements and Raman spectroscopy studies confirm that pseudomorphic growth and relatively abrupt interfaces were achieved.File | Dimensione | Formato | |
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