Si‐GaAs(001) superlattices have been grown by molecular beam epitaxy. X‐ray interference measurements and Raman spectroscopy studies in the acoustic range for (Si)2(GaAs)28 and (Si)3(GaAs)50 superlattice structures demonstrate that pseudomorphic growth conditions were achieved. Raman data in the optical range show large (∼50–70 cm−1) confinement‐ and strain‐induced shifts of the Si‐like optical modes.
Si‐GaAs(001) superlattices / Sorba, L., G., B., A., F., L., T., G., S., V., S., Molinari, E.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 61:(1992), pp. 1570-1572. [10.1063/1.107499]
Si‐GaAs(001) superlattices
SORBA, Lucia;MOLINARI, Elisa
1992
Abstract
Si‐GaAs(001) superlattices have been grown by molecular beam epitaxy. X‐ray interference measurements and Raman spectroscopy studies in the acoustic range for (Si)2(GaAs)28 and (Si)3(GaAs)50 superlattice structures demonstrate that pseudomorphic growth conditions were achieved. Raman data in the optical range show large (∼50–70 cm−1) confinement‐ and strain‐induced shifts of the Si‐like optical modes.
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