The aim of this letter is to include the contribution of the optical phonon scattering mechanism in theory of piezoresitive effect for the case of holes in covalent semiconductors. In this way a more complete study of the dependence with temperature of the piezoresistance coefficients is made possible and a comparison between theory and experiment is carried out.
On the piezoresistance coefficients of holes in Ge / Morten, Bruno; L., Reggiani. - In: LETTERE AL NUOVO CIMENTO DELLA SOCIETÀ ITALIANA DI FISICA. - ISSN 0375-930X. - STAMPA. - 18:(1977), pp. 329-332. [10.1007/BFO2784913]
On the piezoresistance coefficients of holes in Ge
MORTEN, Bruno;
1977
Abstract
The aim of this letter is to include the contribution of the optical phonon scattering mechanism in theory of piezoresitive effect for the case of holes in covalent semiconductors. In this way a more complete study of the dependence with temperature of the piezoresistance coefficients is made possible and a comparison between theory and experiment is carried out.
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