We compute the optical properties of semiconductor surfaces starting from the self-consistent electronic structures determined using local pseudopotentials with a plane-wave basis set. Calculations for a 9 layer (110) slab of GaP are carried out with both clean and H covered surfaces. Differential reflectivity spectra and their anisotropies are interpreted in terms of transitions involving surface states.
Microscopic calculation of differential reflectivity of GaP(110) / Manghi, Franca; Molinari, Elisa; R., del Sole; A., Selloni. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 189:(1987), pp. 1028-1032. [10.1016/S0039-6028(87)80545-9]
Microscopic calculation of differential reflectivity of GaP(110)
MANGHI, Franca;MOLINARI, Elisa;
1987
Abstract
We compute the optical properties of semiconductor surfaces starting from the self-consistent electronic structures determined using local pseudopotentials with a plane-wave basis set. Calculations for a 9 layer (110) slab of GaP are carried out with both clean and H covered surfaces. Differential reflectivity spectra and their anisotropies are interpreted in terms of transitions involving surface states.
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