The hydrodynamic model has become popular in the last years in the field of analysis and simulation of semiconductor devices. This paper reviews the foundations of the method and its applications to device simulation.

Hydrodynamic simulation of Semiconductor Devices / Massimo, R., Martino, L., Brunetti, R. - In: Theory of transport Properties of Semiconductor nanostructures / E. Schoell. - STAMPA. - London : Chapman & Hall, 1998. - ISBN 0412731002. - pp. 27-57 [10.1016/S0079-6727(97)00013-X]

Hydrodynamic simulation of Semiconductor Devices

BRUNETTI, Rossella
1998

Abstract

The hydrodynamic model has become popular in the last years in the field of analysis and simulation of semiconductor devices. This paper reviews the foundations of the method and its applications to device simulation.
1998
Inglese
Theory of transport Properties of Semiconductor nanostructures
27
57
31
0412731002
Chapman & Hall
REGNO UNITO DI GRAN BRETAGNA
London
Semiconductor Devices; Hydrodynamic model; transport equations
Hydrodynamic simulation of Semiconductor Devices / Massimo, R., Martino, L., Brunetti, R. - In: Theory of transport Properties of Semiconductor nanostructures / E. Schoell. - STAMPA. - London : Chapman & Hall, 1998. - ISBN 0412731002. - pp. 27-57 [10.1016/S0079-6727(97)00013-X]
Massimo, Rudan; Martino, Lorenzini; Brunetti, Rossella
3
Contributo su VOLUME::Capitolo/Saggio
268
none
info:eu-repo/semantics/bookPart
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/742784
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