The piezoresistivity coefficients in p- and n- channel MOS transitors manufactured on silicon wafers cut parallel to the (111) and (100) planes as a function of VD and VG and of the temperature, between-20 and 120 C, have been measured with the particular aim of investigating the possible application of MOS transistors for strain measurements, by comparing the advantages and the diadvantages with bulk and diffused resistors. The characteristics of the MOS devices can be consistently better than the corresonding ones of bulk semiconductor strain gauges, partucularly as regards the temperature stability of resistivity and the electrical charactristics.
Piezoresistive effects in MOS-FET useful for pressure transducers / C., Canali; G., Ferla; Morten, Bruno; A., Taroni. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - STAMPA. - 12:(1979), pp. 1973-1983. [10.1088/0022-3727/12/11/025]
Piezoresistive effects in MOS-FET useful for pressure transducers
MORTEN, Bruno;
1979
Abstract
The piezoresistivity coefficients in p- and n- channel MOS transitors manufactured on silicon wafers cut parallel to the (111) and (100) planes as a function of VD and VG and of the temperature, between-20 and 120 C, have been measured with the particular aim of investigating the possible application of MOS transistors for strain measurements, by comparing the advantages and the diadvantages with bulk and diffused resistors. The characteristics of the MOS devices can be consistently better than the corresonding ones of bulk semiconductor strain gauges, partucularly as regards the temperature stability of resistivity and the electrical charactristics.
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