Functionalization of silicon surfaces with Nallylurea(CH2CH−CNH−CO−NH2) represents a valuable strategy to obtain covalently bonded Si−C interfaces with amino and/or carbonyl termination. In this work, we studied N-allylurea adsorption on the Si(111)-(7 × 7) surface by combining X-ray and ultraviolet photoemission spectroscopy (XPS and UPS) with high resolution energy loss spectroscopy (HREELS) measurements. XPS core level analysis provides information on the molecular attachment process. Si−C covalent bonding is evidenced by the presence of a C 1s component at 284.8 eV, while interaction through N−Si bonding is proved by the presence of a N 1s component at 397.8 eV. Three different adsorption mechanisms are envisaged: (I) [2 + 2]-like cycloaddition occurring at the rest atom−adatom dimer through cleavage of the vinyl group, (II) Si−N bonding at adatom sites upon cleavage of NH2 and rearrangement of the ureic group to form an imidol species (−NC−OH), with release of a H atom, and (III) hydrosilylation at adatom sites, through cleavage of the vinyl group and involvement of H atoms provided by reaction II.

Competing Pathways in N-Allylurea Adsorption on Si(111)-(7 × 7) / DE RENZI, Valentina; Arnaud, Gaelle Francoise; DEL PENNINO, Umberto. - In: JOURNAL OF PHYSICAL CHEMISTRY. C. - ISSN 1932-7447. - STAMPA. - 116:(2012), pp. 5673-5680. [10.1021/jp2103726]

Competing Pathways in N-Allylurea Adsorption on Si(111)-(7 × 7)

DE RENZI, Valentina;ARNAUD, Gaelle Francoise;DEL PENNINO, Umberto
2012

Abstract

Functionalization of silicon surfaces with Nallylurea(CH2CH−CNH−CO−NH2) represents a valuable strategy to obtain covalently bonded Si−C interfaces with amino and/or carbonyl termination. In this work, we studied N-allylurea adsorption on the Si(111)-(7 × 7) surface by combining X-ray and ultraviolet photoemission spectroscopy (XPS and UPS) with high resolution energy loss spectroscopy (HREELS) measurements. XPS core level analysis provides information on the molecular attachment process. Si−C covalent bonding is evidenced by the presence of a C 1s component at 284.8 eV, while interaction through N−Si bonding is proved by the presence of a N 1s component at 397.8 eV. Three different adsorption mechanisms are envisaged: (I) [2 + 2]-like cycloaddition occurring at the rest atom−adatom dimer through cleavage of the vinyl group, (II) Si−N bonding at adatom sites upon cleavage of NH2 and rearrangement of the ureic group to form an imidol species (−NC−OH), with release of a H atom, and (III) hydrosilylation at adatom sites, through cleavage of the vinyl group and involvement of H atoms provided by reaction II.
2012
116
5673
5680
Competing Pathways in N-Allylurea Adsorption on Si(111)-(7 × 7) / DE RENZI, Valentina; Arnaud, Gaelle Francoise; DEL PENNINO, Umberto. - In: JOURNAL OF PHYSICAL CHEMISTRY. C. - ISSN 1932-7447. - STAMPA. - 116:(2012), pp. 5673-5680. [10.1021/jp2103726]
DE RENZI, Valentina; Arnaud, Gaelle Francoise; DEL PENNINO, Umberto
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/735450
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