High-luminosity and high-energy-resolution photoemission spectroscopy call provide direct observation of the spectral density of metal-induced states throughout the whole band gap, even at extremely low metal deposition. We present a study of the density of states of a two-dimensional electron gas induced in the InAs(110) conduction band by deposition of caesium, antimony and silver adatoms. We follow the density of states redistribution between the two-dimensional electron-gas channel and the appearance of metal-induced gap states. (C) 2000 Elsevier Science B.V. All rights reserved.
Metal-induced gap states at InAs(110) surface / Betti, Mg; Bertoni, G; Corradini, V; DE RENZI, Valentina; Mariani, C.. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 454:(2000), pp. 539-542. [10.1016/S0039-6028(00)00065-0]
Metal-induced gap states at InAs(110) surface
DE RENZI, Valentina;
2000
Abstract
High-luminosity and high-energy-resolution photoemission spectroscopy call provide direct observation of the spectral density of metal-induced states throughout the whole band gap, even at extremely low metal deposition. We present a study of the density of states of a two-dimensional electron gas induced in the InAs(110) conduction band by deposition of caesium, antimony and silver adatoms. We follow the density of states redistribution between the two-dimensional electron-gas channel and the appearance of metal-induced gap states. (C) 2000 Elsevier Science B.V. All rights reserved.
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