We calculate the hole band structure and effective masses in a two-dimensional hole gas (2DHG) in p-doped [113]-grown heterojunctions. A Hamiltonian for the 2DHG is derived which is formally similar to the Luttinger Hamiltonian which describes the hole gas in conventional [001] heterojunctions. We use a limited analytical basis set of uncoupled heavy-hole and light-hole states which allow us to obtain a qualitative description of the differences between [113]- and [001]-grown heterojunctions. We avoid the self-consistent calculation of the electrostatic confining potential by use of an analytical model which proved to be very accurate. In addition to numerical calculations, we derive analytical expressions of the hole subbands which are valid at small in-plane wave vectors. We compute the classical effective masses of the 2DHG as a function of the charge density and we compare with those obtained for conventional [001]-grown structures. We found that the latter are systematically larger in a broad range of carrier concentrations.

Hole subbands and effective masses in p-doped [113]-grown heterojunctions / GOLDONI, Guido; F. M., Peeters. - In: PHYSICAL REVIEW. B, RAPID COMMUNICATIONS. - ISSN 1082-586X. - STAMPA. - 51:(1995), pp. 17806-17813.

Hole subbands and effective masses in p-doped [113]-grown heterojunctions

GOLDONI, Guido;
1995

Abstract

We calculate the hole band structure and effective masses in a two-dimensional hole gas (2DHG) in p-doped [113]-grown heterojunctions. A Hamiltonian for the 2DHG is derived which is formally similar to the Luttinger Hamiltonian which describes the hole gas in conventional [001] heterojunctions. We use a limited analytical basis set of uncoupled heavy-hole and light-hole states which allow us to obtain a qualitative description of the differences between [113]- and [001]-grown heterojunctions. We avoid the self-consistent calculation of the electrostatic confining potential by use of an analytical model which proved to be very accurate. In addition to numerical calculations, we derive analytical expressions of the hole subbands which are valid at small in-plane wave vectors. We compute the classical effective masses of the 2DHG as a function of the charge density and we compare with those obtained for conventional [001]-grown structures. We found that the latter are systematically larger in a broad range of carrier concentrations.
1995
51
17806
17813
Hole subbands and effective masses in p-doped [113]-grown heterojunctions / GOLDONI, Guido; F. M., Peeters. - In: PHYSICAL REVIEW. B, RAPID COMMUNICATIONS. - ISSN 1082-586X. - STAMPA. - 51:(1995), pp. 17806-17813.
GOLDONI, Guido; F. M., Peeters
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/707747
Citazioni
  • ???jsp.display-item.citation.pmc??? 0
  • Scopus 15
  • ???jsp.display-item.citation.isi??? 14
social impact