Charge transport in amorphous chalcogenide-GST used for memory devices is modeled using two contributions: hopping of trapped electrons and motion of band electrons in extended states. The type of feedback that produces the snapback phenomenon is described as a filamentation in energy that is controlled by electron-electron interactions between trapped electrons and band electrons. The model thus derived is implemented within a state-of-the-art simulator. An analytical version of the model is also derived and is useful for discussing the snapback behavior and the scaling properties of the device.
Voltage snapback in amorphous-GST memory devices: transport model and validation / M., Rudan; F., Giovanardi; E., Piccinini; F., Buscemi; Brunetti, Rossella; Jacoboni, Carlo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 58:12(2011), pp. 4361-4369. [10.1109/TED.2011.2168402]
Voltage snapback in amorphous-GST memory devices: transport model and validation
BRUNETTI, Rossella;JACOBONI, Carlo
2011
Abstract
Charge transport in amorphous chalcogenide-GST used for memory devices is modeled using two contributions: hopping of trapped electrons and motion of band electrons in extended states. The type of feedback that produces the snapback phenomenon is described as a filamentation in energy that is controlled by electron-electron interactions between trapped electrons and band electrons. The model thus derived is implemented within a state-of-the-art simulator. An analytical version of the model is also derived and is useful for discussing the snapback behavior and the scaling properties of the device.
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