Au island nucleation and growth on a Si(111) 7 · 7 vicinal surface was studied by means of scanning tunneling microscopy. The surfacewas prepared to have a regular array of step bunches. Growth temperature and Au coverage were varied in the 255–430 C substratetemperature range and from 1 to 7 monolayers, respectively. Two kinds of islands are observed on the surface: Au–Si reconstructedislands on the terraces and three-dimensional (3D) islands along the step bunches. Focusing on the latter, the dependence of island density,size and position on substrate temperature and on Au coverage is investigated. At 340 C and above, hemispherical 3D islandsnucleate systematically on the step edges.
Au island growth on a Si(111) vicinal surface / Rota, Alberto; A., Martinez Gil; G., Agnus; E., Moyen; T., Maroutian; B., Bartenlian; R., Mégy; M., Hanbücken; P., Beauvillain. - In: SURFACE SCIENCE. - ISSN 0039-6028. - ELETTRONICO. - 600:(2006), pp. 1207-1212. [10.1016/j.susc.2006.01.036]
Au island growth on a Si(111) vicinal surface
ROTA, Alberto;
2006
Abstract
Au island nucleation and growth on a Si(111) 7 · 7 vicinal surface was studied by means of scanning tunneling microscopy. The surfacewas prepared to have a regular array of step bunches. Growth temperature and Au coverage were varied in the 255–430 C substratetemperature range and from 1 to 7 monolayers, respectively. Two kinds of islands are observed on the surface: Au–Si reconstructedislands on the terraces and three-dimensional (3D) islands along the step bunches. Focusing on the latter, the dependence of island density,size and position on substrate temperature and on Au coverage is investigated. At 340 C and above, hemispherical 3D islandsnucleate systematically on the step edges.
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