We present a method for evaluating the spatial inhomogeneity of adsorbate-induced band bending on semiconductors from the substrate core-level lineshape. As a case study we consider the first stages of accumulation layer formation due to K adsorption on the H:Si(lll) surface at 300 K. The observed Si 2p core-level lineshape variation is accounted for considering each randomly distributed adatom as a source,of a screened Coulomb potential. We determine the coverage: dependence of the band-bending distribution, and the parameters characterizing the local K-induced potential.
Evaluation of alkali-induced band-bending inhomogeneity and charge transfer trend from core-level analysis / DE RENZI, Valentina; Biagi, Roberto; DEL PENNINO, Umberto; Pedio, M; Goldoni, A; Larciprete, R.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 62:16(2000), pp. R10657-R10660. [10.1103/PhysRevB.62.R10657]
Evaluation of alkali-induced band-bending inhomogeneity and charge transfer trend from core-level analysis
DE RENZI, Valentina;BIAGI, Roberto;DEL PENNINO, Umberto;
2000
Abstract
We present a method for evaluating the spatial inhomogeneity of adsorbate-induced band bending on semiconductors from the substrate core-level lineshape. As a case study we consider the first stages of accumulation layer formation due to K adsorption on the H:Si(lll) surface at 300 K. The observed Si 2p core-level lineshape variation is accounted for considering each randomly distributed adatom as a source,of a screened Coulomb potential. We determine the coverage: dependence of the band-bending distribution, and the parameters characterizing the local K-induced potential.
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