The room temperature adsorption of H2S on Ge(001) 2 x 1 has been studied using surface-extended x-ray-absorption fine structure, low-energy electron diffraction and Auger electron spectroscopy. The Ge(001) 2 x 1-S system formed by a saturation dose followed by an anneal to remove H has a S-Ge bond length of 2.36 +/- 0.05 angstrom, with S sitting in twofold bridge sites, consistent with breaking of the Ge-Ge dimer reconstruction. Further adsorption of H2S at low or elevated temperatures is kinetically unfavourable, and it is proposed that this is consistent with the surface Ge atoms sitting in non-ideal rather than bulk-terminated positions.
ADSORBATE-INDUCED DE-RECONSTRUCTION IN THE INTERACTION OF H2S WITH GE(001) 2X1 / K., Newstead; A. W., Robinson; D'Addato, Sergio; A., Patchett; N. P., Prince; R., Mcgrath; R., Whittle; E., Dudzik; I. T., Mcgovern. - In: JOURNAL OF PHYSICS. CONDENSED MATTER. - ISSN 0953-8984. - STAMPA. - 44:(1992), pp. 8441-8446. [10.1088/0953-8984/4/44/006]
ADSORBATE-INDUCED DE-RECONSTRUCTION IN THE INTERACTION OF H2S WITH GE(001) 2X1
D'ADDATO, Sergio;
1992
Abstract
The room temperature adsorption of H2S on Ge(001) 2 x 1 has been studied using surface-extended x-ray-absorption fine structure, low-energy electron diffraction and Auger electron spectroscopy. The Ge(001) 2 x 1-S system formed by a saturation dose followed by an anneal to remove H has a S-Ge bond length of 2.36 +/- 0.05 angstrom, with S sitting in twofold bridge sites, consistent with breaking of the Ge-Ge dimer reconstruction. Further adsorption of H2S at low or elevated temperatures is kinetically unfavourable, and it is proposed that this is consistent with the surface Ge atoms sitting in non-ideal rather than bulk-terminated positions.
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