We present a novel additive process, which allows the spatially controlled integration of nanoparticles (NPs) inside silicon surfaces. The NPs are placed between a conductive stamp and a silicon surface; by applying a bias voltage a SiO2 layer grows underneath the stamp protrusions, thus embedding the particles. We report the successful nanoembedding of CoFe2O4 nanoparticles patterned in lines, grids and logic structures.
Additive nanoscale embedding of functional nanoparticles on silicon surface / M., Cavallini; F. C., Simeone; F., Borgatti; C., Albonetti; V., Morandi; C., Sangregorio; C., Innocenti; F., Pineider; E., Annese; G., Panaccione; Pasquali, Luca. - In: NANOSCALE. - ISSN 2040-3364. - STAMPA. - 2:(2010), pp. 2069-2072. [10.1039/c0nr00315h]
Additive nanoscale embedding of functional nanoparticles on silicon surface
PASQUALI, Luca
2010
Abstract
We present a novel additive process, which allows the spatially controlled integration of nanoparticles (NPs) inside silicon surfaces. The NPs are placed between a conductive stamp and a silicon surface; by applying a bias voltage a SiO2 layer grows underneath the stamp protrusions, thus embedding the particles. We report the successful nanoembedding of CoFe2O4 nanoparticles patterned in lines, grids and logic structures.
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