The influence of Fe-doped buffer parameters on the static and dynamic characteristics of GaN HEMTs have been analyzed by means of two-dimensional numerical simulations. Results obtained on the static characteristics of the simulated devices have shown that thick and highly doped buffers yield better performances in terms of device output conductance and subthreshold conduction, while leaving mainly unaffected other DC parameters. On the other hand, when dynamic characteristics are evaluated, a significant current collapse has been observed pointing out the importance of the correct design of Fe-doped buffer parameters in order to obtain state-of-the-art GaN HEMT performances.
Dependence of Static and Dynamic GaN HEMT Characteristics from Fe-doped GaN Buffer Parameters / Chini, Alessandro; C., Lanzieri; E., Zanoni. - STAMPA. - (2011), pp. 143-144. (Intervento presentato al convegno 35th Workshop on Compound Semiconductor Devices and Integrated Circuits tenutosi a Catania (Italy) nel 29 May - 1 June).
Dependence of Static and Dynamic GaN HEMT Characteristics from Fe-doped GaN Buffer Parameters
CHINI, Alessandro;
2011
Abstract
The influence of Fe-doped buffer parameters on the static and dynamic characteristics of GaN HEMTs have been analyzed by means of two-dimensional numerical simulations. Results obtained on the static characteristics of the simulated devices have shown that thick and highly doped buffers yield better performances in terms of device output conductance and subthreshold conduction, while leaving mainly unaffected other DC parameters. On the other hand, when dynamic characteristics are evaluated, a significant current collapse has been observed pointing out the importance of the correct design of Fe-doped buffer parameters in order to obtain state-of-the-art GaN HEMT performances.
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