In this paper we propose and advanced fully automated high yield process to fabricate MMIC based on 0.25um T-gate technology. The industrialization of such process will make available a mature technology suitable to satisfy the increasing demand for military and space wide-band and X-band T/R modules applications. RF device performances have been evaluated focusing our attention to Power Amplifier (PA) and robust Low Noise Amplifier (LNA)
High Level of Automated Process for Broadband and X-Band MMIC's Production / P., Romanini; A., Bettidi; Chini, Alessandro; W., Ciccognani; S., Colangeli; D., Dominijanni; E., Limiti; A., Nanni; C., Lanzieri. - STAMPA. - (2011), pp. 15-16. (Intervento presentato al convegno 35th Workshop on Compound Semiconductor Devices and Integrated Circuits tenutosi a Catania (Italy) nel 29 May - 1 June).
High Level of Automated Process for Broadband and X-Band MMIC's Production
CHINI, Alessandro;
2011
Abstract
In this paper we propose and advanced fully automated high yield process to fabricate MMIC based on 0.25um T-gate technology. The industrialization of such process will make available a mature technology suitable to satisfy the increasing demand for military and space wide-band and X-band T/R modules applications. RF device performances have been evaluated focusing our attention to Power Amplifier (PA) and robust Low Noise Amplifier (LNA)Pubblicazioni consigliate
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