In this paper we propose and advanced fully automated high yield process to fabricate MMIC based on 0.25um T-gate technology. The industrialization of such process will make available a mature technology suitable to satisfy the increasing demand for military and space wide-band and X-band T/R modules applications. RF device performances have been evaluated focusing our attention to Power Amplifier (PA) and robust Low Noise Amplifier (LNA)

High Level of Automated Process for Broadband and X-Band MMIC's Production / P., Romanini; A., Bettidi; Chini, Alessandro; W., Ciccognani; S., Colangeli; D., Dominijanni; E., Limiti; A., Nanni; C., Lanzieri. - STAMPA. - (2011), pp. 15-16. (Intervento presentato al convegno 35th Workshop on Compound Semiconductor Devices and Integrated Circuits tenutosi a Catania (Italy) nel 29 May - 1 June).

High Level of Automated Process for Broadband and X-Band MMIC's Production

CHINI, Alessandro;
2011

Abstract

In this paper we propose and advanced fully automated high yield process to fabricate MMIC based on 0.25um T-gate technology. The industrialization of such process will make available a mature technology suitable to satisfy the increasing demand for military and space wide-band and X-band T/R modules applications. RF device performances have been evaluated focusing our attention to Power Amplifier (PA) and robust Low Noise Amplifier (LNA)
2011
35th Workshop on Compound Semiconductor Devices and Integrated Circuits
Catania (Italy)
29 May - 1 June
15
16
P., Romanini; A., Bettidi; Chini, Alessandro; W., Ciccognani; S., Colangeli; D., Dominijanni; E., Limiti; A., Nanni; C., Lanzieri
High Level of Automated Process for Broadband and X-Band MMIC's Production / P., Romanini; A., Bettidi; Chini, Alessandro; W., Ciccognani; S., Colangeli; D., Dominijanni; E., Limiti; A., Nanni; C., Lanzieri. - STAMPA. - (2011), pp. 15-16. (Intervento presentato al convegno 35th Workshop on Compound Semiconductor Devices and Integrated Circuits tenutosi a Catania (Italy) nel 29 May - 1 June).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/653639
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