Defects are usually present in organic polymer films and are commonly invoked to explain the low efficiency obtained in organic-based optoelectronic devices. We propose that controlled insertion of substitutional impurities may, on the contrary, tune the optoelectronic properties of the underivatized organic material and, in the case studied here, maximize the efficiency of a solar cell. We investigate a specific oxygen-impurity substitution, the keto-defect -(CH2-C=O)- in underivatized crystalline poly(p-phenylenevinylene) (PPV), and its impact on the electronic structure of the bulk film, through a combined classical (force-field) and quantum mechanical (DFT) approach. We find defect states which suggest a spontaneous electron hole separation typical of a donor acceptor interface, optimal for photovoltaic devices. Furthermore, the inclusion of oxygen impurities does not introduce defect states in the gap and thus, contrary to standard donor-acceptor systems, should preserve the intrinsic high open circuit voltage (V-oc) that may be extracted from PPV-based devices.

Substitutional Impurities in PPV Crystals: An Intrinsic Donor-Acceptor System for High V-oc Photovoltaic Devices / A., Calzolari; Ruini, Alice; C., Cavazzoni; M. J., Caldas. - In: JOURNAL OF PHYSICAL CHEMISTRY. C. - ISSN 1932-7447. - ELETTRONICO. - 114:(2010), pp. 19535-19539. [10.1021/jp105765d]

Substitutional Impurities in PPV Crystals: An Intrinsic Donor-Acceptor System for High V-oc Photovoltaic Devices

RUINI, Alice;
2010

Abstract

Defects are usually present in organic polymer films and are commonly invoked to explain the low efficiency obtained in organic-based optoelectronic devices. We propose that controlled insertion of substitutional impurities may, on the contrary, tune the optoelectronic properties of the underivatized organic material and, in the case studied here, maximize the efficiency of a solar cell. We investigate a specific oxygen-impurity substitution, the keto-defect -(CH2-C=O)- in underivatized crystalline poly(p-phenylenevinylene) (PPV), and its impact on the electronic structure of the bulk film, through a combined classical (force-field) and quantum mechanical (DFT) approach. We find defect states which suggest a spontaneous electron hole separation typical of a donor acceptor interface, optimal for photovoltaic devices. Furthermore, the inclusion of oxygen impurities does not introduce defect states in the gap and thus, contrary to standard donor-acceptor systems, should preserve the intrinsic high open circuit voltage (V-oc) that may be extracted from PPV-based devices.
2010
114
19535
19539
Substitutional Impurities in PPV Crystals: An Intrinsic Donor-Acceptor System for High V-oc Photovoltaic Devices / A., Calzolari; Ruini, Alice; C., Cavazzoni; M. J., Caldas. - In: JOURNAL OF PHYSICAL CHEMISTRY. C. - ISSN 1932-7447. - ELETTRONICO. - 114:(2010), pp. 19535-19539. [10.1021/jp105765d]
A., Calzolari; Ruini, Alice; C., Cavazzoni; M. J., Caldas
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/647399
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