Nanostructured AISI430 stainless steel powders, obtained by high energy milling have been uniaxially pressed in order to obtain 8 mm diameter cylindrical compacts. Microwave sintering of the green compacts has been performed in a single mode microwave applicator, at 2.45 GHz. Maximum sintering temperature of each sample, monitored using a sapphire optical fibre, was varied in the 1000-1200°C range, with heating rates in the 20-30 K/s range, applying 1200 W of microwave forward power. Dense nanostructured samples, with less than 1% porosity were obtained, presenting small local variation of Cr content in proximity of the necking region. Rapid microwave sintering helps maintaining the nanostructure, despite a non homogenous densification due to the uneven electromagnetic field distribution in the single-mode applicator
Microwave Rapid Sintering of Nanostructured Stainless Steel Metal Powders / Veronesi, Paolo; Leonelli, Cristina; Poli, Giorgio; Bassoli, Elena; Denti, Lucia; Gatto, Andrea. - STAMPA. - 3:(2009), pp. 143-148. (Intervento presentato al convegno EURO PM2009 tenutosi a Copenhagen nel October 12-14 2009).
Microwave Rapid Sintering of Nanostructured Stainless Steel Metal Powders
VERONESI, Paolo;LEONELLI, Cristina;POLI, Giorgio;BASSOLI, Elena;DENTI, Lucia;GATTO, Andrea
2009
Abstract
Nanostructured AISI430 stainless steel powders, obtained by high energy milling have been uniaxially pressed in order to obtain 8 mm diameter cylindrical compacts. Microwave sintering of the green compacts has been performed in a single mode microwave applicator, at 2.45 GHz. Maximum sintering temperature of each sample, monitored using a sapphire optical fibre, was varied in the 1000-1200°C range, with heating rates in the 20-30 K/s range, applying 1200 W of microwave forward power. Dense nanostructured samples, with less than 1% porosity were obtained, presenting small local variation of Cr content in proximity of the necking region. Rapid microwave sintering helps maintaining the nanostructure, despite a non homogenous densification due to the uneven electromagnetic field distribution in the single-mode applicator
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