In this paper we present a reconfigurable Class-E Power Amplifier (PA) whose operation frequency covers all uplink bands of GSM standard. We describe the circuit design strategy to reconfigure PA operation frequency maximizing the efficiency. Two dies, manufactured using CMOS and MEMS technologies, are assembled through bondwires in a SiP fashion. Prototypes deliver 20dBm output power with 38% and 26% drain efficiencies at lower and upper bands, respectively. MEMS technological issues degrading performance are also discussed.

In this paper we present a reconfigurable Class-E Power Amplifier (PA) whose operation frequency covers all uplink bands of GSM standard. We describe the circuit design strategy to reconfigure PA operation frequency maximizing the efficiency. Two dies, manufactured using CMOS and MEMS technologies, are assembled through bondwires in a SiP fashion. Prototypes deliver 20dBm output power with 38% and 26% drain efficiencies at lower and upper bands, respectively. MEMS technological issues degrading performance are also discussed. © 2009 EDAA.

A MEMS reconfigurable quad-band Class-E Power Amplifier for GSM standard / Larcher, Luca; Brama, Riccardo; Ganzerli, Marcello; J., Iannacci; M., Bedani; A., Gnudi. - STAMPA. - (2009), pp. 364-368. ((Intervento presentato al convegno Design, Automation & Test in Europe Conference & Exhibition, 2009. DATE '09. tenutosi a Nice, fra nel 20-24 April 2009 [10.1109/date.2009.5090689].

A MEMS reconfigurable quad-band Class-E Power Amplifier for GSM standard

LARCHER, Luca;BRAMA, Riccardo;GANZERLI, MARCELLO;
2009

Abstract

In this paper we present a reconfigurable Class-E Power Amplifier (PA) whose operation frequency covers all uplink bands of GSM standard. We describe the circuit design strategy to reconfigure PA operation frequency maximizing the efficiency. Two dies, manufactured using CMOS and MEMS technologies, are assembled through bondwires in a SiP fashion. Prototypes deliver 20dBm output power with 38% and 26% drain efficiencies at lower and upper bands, respectively. MEMS technological issues degrading performance are also discussed.
Design, Automation & Test in Europe Conference & Exhibition, 2009. DATE '09.
Nice, fra
20-24 April 2009
364
368
Larcher, Luca; Brama, Riccardo; Ganzerli, Marcello; J., Iannacci; M., Bedani; A., Gnudi
A MEMS reconfigurable quad-band Class-E Power Amplifier for GSM standard / Larcher, Luca; Brama, Riccardo; Ganzerli, Marcello; J., Iannacci; M., Bedani; A., Gnudi. - STAMPA. - (2009), pp. 364-368. ((Intervento presentato al convegno Design, Automation & Test in Europe Conference & Exhibition, 2009. DATE '09. tenutosi a Nice, fra nel 20-24 April 2009 [10.1109/date.2009.5090689].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/634704
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