We present excitation energy spectra of few-electron vertically coupled quantum dots for strong and intermediate interdot coupling. By applying a magnetic field, we induce ground state transitions and identify the corresponding quantum numbers by comparison with few-body calculations. In addition to atomiclike states, we find novel "molecularlike" phases. The isospin index characterizes the nature of the bond of the artificial molecule and this we control. Like spin in a single quantum dot, transitions in isospin leading to full polarization are observed with increasing magnetic field.

Molecular phases in vertically coupled quantum dot molecules / S., Amaha; M., Rontani; Manghi, Franca; Molinari, Elisa; D. G., Austing; K., Ono; S., Tarucha. - STAMPA. - 171:(2003), pp. 109-112. (Intervento presentato al convegno 26-th International Conference on the Physics of Semiconductors tenutosi a Eidimburgo nel 29 luglio - 2 agosto 2002).

Molecular phases in vertically coupled quantum dot molecules

MANGHI, Franca;MOLINARI, Elisa;
2003

Abstract

We present excitation energy spectra of few-electron vertically coupled quantum dots for strong and intermediate interdot coupling. By applying a magnetic field, we induce ground state transitions and identify the corresponding quantum numbers by comparison with few-body calculations. In addition to atomiclike states, we find novel "molecularlike" phases. The isospin index characterizes the nature of the bond of the artificial molecule and this we control. Like spin in a single quantum dot, transitions in isospin leading to full polarization are observed with increasing magnetic field.
2003
26-th International Conference on the Physics of Semiconductors
Eidimburgo
29 luglio - 2 agosto 2002
171
109
112
S., Amaha; M., Rontani; Manghi, Franca; Molinari, Elisa; D. G., Austing; K., Ono; S., Tarucha
Molecular phases in vertically coupled quantum dot molecules / S., Amaha; M., Rontani; Manghi, Franca; Molinari, Elisa; D. G., Austing; K., Ono; S., Tarucha. - STAMPA. - 171:(2003), pp. 109-112. (Intervento presentato al convegno 26-th International Conference on the Physics of Semiconductors tenutosi a Eidimburgo nel 29 luglio - 2 agosto 2002).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/621309
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