The differences between the energy positions of surface bands in quasi-particle and local-density approximations are calculated taking into account the different screening properties of a semiconductor and of an electron gas of the same average density. Gap corrections of the order of 1.5 eV are computed for GaP(110) and GaAs(110) surfaces, in good agreement with experiment.
GIANT QUASI-PARTICLE SHIFTS OF SEMICONDUCTOR SURFACE-STATES / Bechstedt, F; Delsole, R; Manghi, Franca. - In: JOURNAL OF PHYSICS. CONDENSED MATTER. - ISSN 0953-8984. - STAMPA. - 1:(1989), pp. 75-78.
GIANT QUASI-PARTICLE SHIFTS OF SEMICONDUCTOR SURFACE-STATES
MANGHI, Franca
1989
Abstract
The differences between the energy positions of surface bands in quasi-particle and local-density approximations are calculated taking into account the different screening properties of a semiconductor and of an electron gas of the same average density. Gap corrections of the order of 1.5 eV are computed for GaP(110) and GaAs(110) surfaces, in good agreement with experiment.
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