We show that the number of electrons confined in a semiconductor quantum dot has a strong influence over the Rashba and Dresselhaus spin-orbit (SO) admixture. This can be exploited to improve the lifetime of spin excitations, as compared to the usual one- and two-electron devices. The physical mechanisms reducing SO admixture are discussed, and numerical results for realistic weakly confined GaAs/AlGaAs dots are reported. (c) 2007 Elsevier B.V. AD rights reserved.
Spin relaxation due to spin-orbit coupling in multi-electron quantum dots / J. I., Climente; A., Bertoni; Goldoni, Guido; M., Rontani; Molinari, Elisa. - In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. - ISSN 1386-9477. - STAMPA. - 40:6(2008), pp. 1804-1806. [10.1016/j.physe.2007.09.127]
Spin relaxation due to spin-orbit coupling in multi-electron quantum dots
GOLDONI, Guido;MOLINARI, Elisa
2008
Abstract
We show that the number of electrons confined in a semiconductor quantum dot has a strong influence over the Rashba and Dresselhaus spin-orbit (SO) admixture. This can be exploited to improve the lifetime of spin excitations, as compared to the usual one- and two-electron devices. The physical mechanisms reducing SO admixture are discussed, and numerical results for realistic weakly confined GaAs/AlGaAs dots are reported. (c) 2007 Elsevier B.V. AD rights reserved.
| File | Dimensione | Formato | |
|---|---|---|---|
|
PhysE_40_1804_08.pdf
Accesso riservato
Tipologia:
Versione pubblicata dall'editore
Dimensione
145.23 kB
Formato
Adobe PDF
|
145.23 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
