To understand the effects of resistivity changes and temperature-coefficient-of-resistance variations caused the migration of metal particles from terminations into the resistor film, the electrical characteristics of Ru-based thick-film resistors with different conductive terminations (PtAu and Ag based compositions) and with different aspect ratios were examined. The data were collected using Ag-based terminations, since Ag diffusion processes and relevant electrical effects are emphasized. Scanning electron microscopy, electron microprobe analysis, and x-ray diffraction analysis were used to study the diffusion processes and the thick-film microstructures. The experimental data can be explained simply by a conduction model that assumes percolative tunneling of electrons through conductive grains embedded in the glass matrix of the resistors. Using simple hypotheses, the model theory gives a good quantitative fit of the experimental results.

Influence of the metal migration from screen-and-fired terminations on the electrical characteristics of thick-film resistors / A., Cattaneo; M., Cocito; F., Forlani; Prudenziati, Maria. - In: ELECTROCOMPONENT SCIENCE AND TECHNOLOGY. - ISSN 0305-3091. - STAMPA. - 4:(1977), pp. 205-211.

Influence of the metal migration from screen-and-fired terminations on the electrical characteristics of thick-film resistors

PRUDENZIATI, Maria
1977-01-01

Abstract

To understand the effects of resistivity changes and temperature-coefficient-of-resistance variations caused the migration of metal particles from terminations into the resistor film, the electrical characteristics of Ru-based thick-film resistors with different conductive terminations (PtAu and Ag based compositions) and with different aspect ratios were examined. The data were collected using Ag-based terminations, since Ag diffusion processes and relevant electrical effects are emphasized. Scanning electron microscopy, electron microprobe analysis, and x-ray diffraction analysis were used to study the diffusion processes and the thick-film microstructures. The experimental data can be explained simply by a conduction model that assumes percolative tunneling of electrons through conductive grains embedded in the glass matrix of the resistors. Using simple hypotheses, the model theory gives a good quantitative fit of the experimental results.
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Influence of the metal migration from screen-and-fired terminations on the electrical characteristics of thick-film resistors / A., Cattaneo; M., Cocito; F., Forlani; Prudenziati, Maria. - In: ELECTROCOMPONENT SCIENCE AND TECHNOLOGY. - ISSN 0305-3091. - STAMPA. - 4:(1977), pp. 205-211.
A., Cattaneo; M., Cocito; F., Forlani; Prudenziati, Maria
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/618838
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