Switching effects were studied in high-resistivity undoped beta-rhombohedral Boron at 77-400 K using electrical and electrooptical measurements. The data collected must be interpreted with different models describing the origin of the switching action, i.e. double injection at low temperatures ( 77-250 K) and thermal instability at higher temperaures (250-400 K). A description of the main physical events givingrise to switching for double injection in the investigated sample is given. Emission of ir radiation in the postswitching regime due to hole-electron recombination is also reported.
Switching effect in beta-rhombohedral boron / Prudenziati, Maria; A., Lanzi; Majni, Giuseppe; G., Malavasi. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - STAMPA. - 18:(1973), pp. 651-659.
Switching effect in beta-rhombohedral boron
PRUDENZIATI, Maria;MAJNI, Giuseppe;
1973
Abstract
Switching effects were studied in high-resistivity undoped beta-rhombohedral Boron at 77-400 K using electrical and electrooptical measurements. The data collected must be interpreted with different models describing the origin of the switching action, i.e. double injection at low temperatures ( 77-250 K) and thermal instability at higher temperaures (250-400 K). A description of the main physical events givingrise to switching for double injection in the investigated sample is given. Emission of ir radiation in the postswitching regime due to hole-electron recombination is also reported.
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