The thermoelecric power of mono-crystalline beta-boron (purity >99.9995%, room-temperature resistivity 5 × MegaOhm cm), measured in the dark, increased from 305 to a maximum of 700 µV/K, and then fell to 650 µV/K, respectively, at T = 190, 345, and 435 K. The observed temperature dependence explained assuming two components in the boron conductivity: a p-type conduction in the valence band, and an n-type conduction of electrons hopping in an impurity band.
Thermoelectric power in crystalline boron / Majni, Giuseppe; Prudenziati, Maria. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - STAMPA. - 5:(1971), pp. K129-K132.
Thermoelectric power in crystalline boron
MAJNI, Giuseppe;PRUDENZIATI, Maria
1971
Abstract
The thermoelecric power of mono-crystalline beta-boron (purity >99.9995%, room-temperature resistivity 5 × MegaOhm cm), measured in the dark, increased from 305 to a maximum of 700 µV/K, and then fell to 650 µV/K, respectively, at T = 190, 345, and 435 K. The observed temperature dependence explained assuming two components in the boron conductivity: a p-type conduction in the valence band, and an n-type conduction of electrons hopping in an impurity band.
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