We present a Monte Carlo study of ultrafast phenomena in polar semiconductors, focusing on the relaxation of photoexcited carriers in bulk GaAs, InP, and in AlGaAs/GaAs quantum wells. The importance of intercarrier interaction and carrier-phonon scattering are discussed. Very good agreement with experimental results obtained with photoluminescence and Raman spectroscopy is found. A novel method for the treatment of the electron-electron scattering via a molecular-dynamics algorithm is also presented and compared with previous approaches.

Femtosecond phenomena in III-V semiconductors / P., Lugli; Bordone, Paolo; S., Gualdi; L., Rota; S. M., Goodnick. - STAMPA. - 1:(1989), pp. 238-243. ((Intervento presentato al convegno Sixth International NASECODE Conference tenutosi a Dublino nel 11-14 luglio 1989.

Femtosecond phenomena in III-V semiconductors

BORDONE, Paolo;
1989

Abstract

We present a Monte Carlo study of ultrafast phenomena in polar semiconductors, focusing on the relaxation of photoexcited carriers in bulk GaAs, InP, and in AlGaAs/GaAs quantum wells. The importance of intercarrier interaction and carrier-phonon scattering are discussed. Very good agreement with experimental results obtained with photoluminescence and Raman spectroscopy is found. A novel method for the treatment of the electron-electron scattering via a molecular-dynamics algorithm is also presented and compared with previous approaches.
Sixth International NASECODE Conference
Dublino
11-14 luglio 1989
1
238
243
P., Lugli; Bordone, Paolo; S., Gualdi; L., Rota; S. M., Goodnick
Femtosecond phenomena in III-V semiconductors / P., Lugli; Bordone, Paolo; S., Gualdi; L., Rota; S. M., Goodnick. - STAMPA. - 1:(1989), pp. 238-243. ((Intervento presentato al convegno Sixth International NASECODE Conference tenutosi a Dublino nel 11-14 luglio 1989.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/618583
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