We present a Monte Carlo study of ultrafast phenomena in polar semiconductors, focusing on the relaxation of photoexcited carriers in bulk GaAs, InP, and in AlGaAs/GaAs quantum wells. The importance of intercarrier interaction and carrier-phonon scattering are discussed. Very good agreement with experimental results obtained with photoluminescence and Raman spectroscopy is found. A novel method for the treatment of the electron-electron scattering via a molecular-dynamics algorithm is also presented and compared with previous approaches.
Femtosecond phenomena in III-V semiconductors / P., Lugli; Bordone, Paolo; S., Gualdi; L., Rota; S. M., Goodnick. - STAMPA. - 1:(1989), pp. 238-243. (Intervento presentato al convegno Sixth International NASECODE Conference tenutosi a Dublino nel 11-14 luglio 1989).
Femtosecond phenomena in III-V semiconductors
BORDONE, Paolo;
1989
Abstract
We present a Monte Carlo study of ultrafast phenomena in polar semiconductors, focusing on the relaxation of photoexcited carriers in bulk GaAs, InP, and in AlGaAs/GaAs quantum wells. The importance of intercarrier interaction and carrier-phonon scattering are discussed. Very good agreement with experimental results obtained with photoluminescence and Raman spectroscopy is found. A novel method for the treatment of the electron-electron scattering via a molecular-dynamics algorithm is also presented and compared with previous approaches.
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