We present a Monte Carlo investigation on the influence of a non-equilibrium phonon population (hot phonons) on second order transport properties in GaAs. We calculate the velocity and energy correlation functions both for the case with and without phonon perturbation. The results show significant modifications in the correlation functions and consequently an increase of the equivalent noise temperature due to the presence of hot phonons.

Hot-phonon effect on charge-carrier fluctuations in GaAs / Bordone, Paolo; L., Varani; L., Reggiani; T., Kuhn. - STAMPA. - 285:(1994), pp. 657-660. (Intervento presentato al convegno 12th International Conference on Noise in Physical Systems and 1/f Fluctuations tenutosi a St. Louis (Missouri) nel 10 agosto 1993).

Hot-phonon effect on charge-carrier fluctuations in GaAs

BORDONE, Paolo;
1994

Abstract

We present a Monte Carlo investigation on the influence of a non-equilibrium phonon population (hot phonons) on second order transport properties in GaAs. We calculate the velocity and energy correlation functions both for the case with and without phonon perturbation. The results show significant modifications in the correlation functions and consequently an increase of the equivalent noise temperature due to the presence of hot phonons.
1994
12th International Conference on Noise in Physical Systems and 1/f Fluctuations
St. Louis (Missouri)
10 agosto 1993
285
657
660
Bordone, Paolo; L., Varani; L., Reggiani; T., Kuhn
Hot-phonon effect on charge-carrier fluctuations in GaAs / Bordone, Paolo; L., Varani; L., Reggiani; T., Kuhn. - STAMPA. - 285:(1994), pp. 657-660. (Intervento presentato al convegno 12th International Conference on Noise in Physical Systems and 1/f Fluctuations tenutosi a St. Louis (Missouri) nel 10 agosto 1993).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/617675
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