Using a combination of reciprocal and real-space techniques, the structural evolution and its effect on thesurface morphology is investigated for MgO films of 1–30 ML thickness epitaxially grown on Mo(001). Thestrain induced by the mismatch with the substrate is relieved between 1 and 7 ML MgO due to the formationof an ordered network of interfacial misfit dislocations aligned along the MgO (110) directions, particularlyevident after annealing the film at 1070 K. A dislocation periodicity of about 60 Å has been determined bymeans of grazing incidence x-ray diffraction. The dislocations induce a tilting of the surface that appears inelectron diffraction along the (100) MgO directions for thin films and changes to (110) directions when theoxide thickness increases. Scanning tunneling microscopy (STM) shows the presence of a regular pattern onthe surface below 7 ML thickness associated to the dislocation network. With increasing thickness, screwdislocations connected by nonpolar steps appear on the oxide surface. Thanks to the combination of differentdiffraction techniques and STM measurements, a comprehensive picture of the relaxation mechanisms in MgOfilms on Mo(001) can be drawn.
Structure and morphology of thin MgO films on Mo(001) / S., Benedetti; P., Torelli; Valeri, Sergio; H. M., Benia; N., Nilius; G., Renaud. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 78:(2008), p. 195411. [10.1103/PhysRevB.78.195411]
Structure and morphology of thin MgO films on Mo(001)
S. Benedetti;VALERI, Sergio;
2008
Abstract
Using a combination of reciprocal and real-space techniques, the structural evolution and its effect on thesurface morphology is investigated for MgO films of 1–30 ML thickness epitaxially grown on Mo(001). Thestrain induced by the mismatch with the substrate is relieved between 1 and 7 ML MgO due to the formationof an ordered network of interfacial misfit dislocations aligned along the MgO (110) directions, particularlyevident after annealing the film at 1070 K. A dislocation periodicity of about 60 Å has been determined bymeans of grazing incidence x-ray diffraction. The dislocations induce a tilting of the surface that appears inelectron diffraction along the (100) MgO directions for thin films and changes to (110) directions when theoxide thickness increases. Scanning tunneling microscopy (STM) shows the presence of a regular pattern onthe surface below 7 ML thickness associated to the dislocation network. With increasing thickness, screwdislocations connected by nonpolar steps appear on the oxide surface. Thanks to the combination of differentdiffraction techniques and STM measurements, a comprehensive picture of the relaxation mechanisms in MgOfilms on Mo(001) can be drawn.File | Dimensione | Formato | |
---|---|---|---|
structure and morphology 2008.pdf
Accesso riservato
Tipologia:
Versione dell'autore revisionata e accettata per la pubblicazione
Dimensione
876.31 kB
Formato
Adobe PDF
|
876.31 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris