Integration of the power amplifier together with signal processing in a transmitter is still missing in demanding RF commercial products. Issues preventing PA integration include LO pulling phenomena, thermal dissipation, and power efficiency. In this work we investigate high efficiency watt range Class-E PAs and integrated baluns. In particular, insights in the design of a fully differential cascode topology for high efficiency and reliable operation are provided and a narrowband lumped element balun, employing minimum number of integrated inductors for minimum power loss, is introduced. Two versions have been manufacturedusing a 0.13 m CMOS technology. The first comprises the driver, and a differential PA connected to an external low-loss commercial balun. Experiments prove 31 dBm delivered output power, with 58% PAE and 67% drain efficiency, at 1.7 GHz. The second version adopts the same driver and PA and also integrates the balun. Experiments prove 30.5 dBm delivered output power, with 48% PAE and 55% drain efficiency, at 1.6 GHz.

A 30.5 dBm 48% PAE CMOS class-E PA with integrated balun for RF applications / R., Brama; Larcher, Luca; Mazzanti, Andrea; F., Svelto. - In: IEEE JOURNAL OF SOLID-STATE CIRCUITS. - ISSN 0018-9200. - STAMPA. - 43:8(2008), pp. 1755-1762. ((Intervento presentato al convegno IEEE Custom Integrated Circuits Conference tenutosi a San Jose, CA nel SEP 16-19, 2007 [10.1109/JSSC.2008.925605].

A 30.5 dBm 48% PAE CMOS class-E PA with integrated balun for RF applications

LARCHER, Luca;MAZZANTI, Andrea;
2008-01-01

Abstract

Integration of the power amplifier together with signal processing in a transmitter is still missing in demanding RF commercial products. Issues preventing PA integration include LO pulling phenomena, thermal dissipation, and power efficiency. In this work we investigate high efficiency watt range Class-E PAs and integrated baluns. In particular, insights in the design of a fully differential cascode topology for high efficiency and reliable operation are provided and a narrowband lumped element balun, employing minimum number of integrated inductors for minimum power loss, is introduced. Two versions have been manufacturedusing a 0.13 m CMOS technology. The first comprises the driver, and a differential PA connected to an external low-loss commercial balun. Experiments prove 31 dBm delivered output power, with 58% PAE and 67% drain efficiency, at 1.7 GHz. The second version adopts the same driver and PA and also integrates the balun. Experiments prove 30.5 dBm delivered output power, with 48% PAE and 55% drain efficiency, at 1.6 GHz.
IEEE Custom Integrated Circuits Conference
San Jose, CA
SEP 16-19, 2007
43
1755
1762
R., Brama; Larcher, Luca; Mazzanti, Andrea; F., Svelto
A 30.5 dBm 48% PAE CMOS class-E PA with integrated balun for RF applications / R., Brama; Larcher, Luca; Mazzanti, Andrea; F., Svelto. - In: IEEE JOURNAL OF SOLID-STATE CIRCUITS. - ISSN 0018-9200. - STAMPA. - 43:8(2008), pp. 1755-1762. ((Intervento presentato al convegno IEEE Custom Integrated Circuits Conference tenutosi a San Jose, CA nel SEP 16-19, 2007 [10.1109/JSSC.2008.925605].
File in questo prodotto:
File Dimensione Formato  
jssc2.pdf

non disponibili

Tipologia: Versione dell'autore revisionata e accettata per la pubblicazione
Dimensione 2.75 MB
Formato Adobe PDF
2.75 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/612412
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 60
  • ???jsp.display-item.citation.isi??? 49
social impact