Designers of radio-frequency inductively-degenerated CMOS low-noise-amplifiers have usually not followed the guidelines for achieving minimum noise figure. Nonetheless, state-of-the- art implementations display noise figure values very close to the theoretical minimum. In this paper, we point out that this is due to the effect of the parasitic overlap capacitances in the MOS device. In particular, we show that overlap capacitances lead to a significant induced-gate-noise reduction, especially when deep sub-micron CMOS processes are used.
Reduced Impact of Induced Gate Noise on Inductively Degenerated LNAs in Deep Submicron CMOS Technologies / P., Rossi; F., Svelto; Mazzanti, Andrea; P., Andreani. - In: ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING. - ISSN 0925-1030. - STAMPA. - 42:(2005), pp. 31-36. [10.1023/B:ALOG.0000042325.54391.e6]
Reduced Impact of Induced Gate Noise on Inductively Degenerated LNAs in Deep Submicron CMOS Technologies
MAZZANTI, Andrea;
2005
Abstract
Designers of radio-frequency inductively-degenerated CMOS low-noise-amplifiers have usually not followed the guidelines for achieving minimum noise figure. Nonetheless, state-of-the- art implementations display noise figure values very close to the theoretical minimum. In this paper, we point out that this is due to the effect of the parasitic overlap capacitances in the MOS device. In particular, we show that overlap capacitances lead to a significant induced-gate-noise reduction, especially when deep sub-micron CMOS processes are used.
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