Modern RFICs have achieved an impressively high integration level, making cross-coupling effects among different sections of the circuit a potential limit to their func-tionality. Integrated spiral inductors are a potential source of EM interference. This paper presents a physical equivalent circuit for the accurate wideband modeling of coupling be-tween spiral inductors in CMOS technology, validated by experiments performed on custom test structures. The model proves to be very accurate up to frequencies well above the inductor self-resonance. A simple approximate expression for the mutual inductance is also introduced, useful for the quick estimate of cross talk between different circuit blocks.
A simple and complete circuit model for the coupling between symmetrical spiral inductors in silicon RF-ICs / F., Vecchi; M., Repossi; Mazzanti, Andrea; P., Arcioni; F., Svelto. - STAMPA. - (2008), pp. 479-482. (Intervento presentato al convegno 2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008 tenutosi a Atlanta, GA, usa nel Giugno 2008) [10.1109/RFIC.2008.4561481].
A simple and complete circuit model for the coupling between symmetrical spiral inductors in silicon RF-ICs
MAZZANTI, Andrea;
2008
Abstract
Modern RFICs have achieved an impressively high integration level, making cross-coupling effects among different sections of the circuit a potential limit to their func-tionality. Integrated spiral inductors are a potential source of EM interference. This paper presents a physical equivalent circuit for the accurate wideband modeling of coupling be-tween spiral inductors in CMOS technology, validated by experiments performed on custom test structures. The model proves to be very accurate up to frequencies well above the inductor self-resonance. A simple approximate expression for the mutual inductance is also introduced, useful for the quick estimate of cross talk between different circuit blocks.
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