Flash memories are the leader among nonvolatile memory technologies. Ionizing radiation impact their reliability both on the control circuitry and on the memory array itself. In particular, in FGs hit by ions the tracks of defects generated by ions in the tunnel oxide may result in a radiation induced leakage current (RILC), which can leads to retention problems in hit FGs. We are demonstrating and modeling this phenomenon in a state-of-the-art Floating Gate memory technology. We are also showing that RILC has a peculiar erratic behavior
Single event leakage current in Flash memory / G., Cellere; Larcher, Luca; A., Paccagnella; A., Visconti; M., Bonanomi. - STAMPA. - 1:(2006), pp. 1-4. (Intervento presentato al convegno Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference tenutosi a Padova, ita nel 2006) [10.1109/icicdt.2006.220837].
Single event leakage current in Flash memory
LARCHER, Luca;
2006
Abstract
Flash memories are the leader among nonvolatile memory technologies. Ionizing radiation impact their reliability both on the control circuitry and on the memory array itself. In particular, in FGs hit by ions the tracks of defects generated by ions in the tunnel oxide may result in a radiation induced leakage current (RILC), which can leads to retention problems in hit FGs. We are demonstrating and modeling this phenomenon in a state-of-the-art Floating Gate memory technology. We are also showing that RILC has a peculiar erratic behavior
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
