The paper addresses the calculation of the band structure fordifferent phases of the chalcogenide Ge2Sb2Te5 compound,which is raising considerable interest in view of the applications tothe nonvolatile-memory technology. The band structure is necessary fordetermining the charge- and heat-transport properties of the material.The band diagram of the face-centered cubic phase, which is the mostimportant one for the operation of phase-change memories, is shown forthe first time.
Band calculation for the exagonal and FCC Chalcogenide Ge2Sb2Te5 / E., Piccinini; T., Tsafack; F., Buscemi; Brunetti, Rossella; M., Rudan; Jacoboni, Carlo. - STAMPA. - 13:(2008), pp. 229-232. ((Intervento presentato al convegno 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 tenutosi a Hakone (Japan) nel 9-11 sept 2008 [10.1109/SISPAD.2008.4648279].
Band calculation for the exagonal and FCC Chalcogenide Ge2Sb2Te5
BRUNETTI, Rossella;JACOBONI, Carlo
2008
Abstract
The paper addresses the calculation of the band structure fordifferent phases of the chalcogenide Ge2Sb2Te5 compound,which is raising considerable interest in view of the applications tothe nonvolatile-memory technology. The band structure is necessary fordetermining the charge- and heat-transport properties of the material.The band diagram of the face-centered cubic phase, which is the mostimportant one for the operation of phase-change memories, is shown forthe first time.
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