We present the results of theoretical calculation of the electronic structure of the Sb-GaAs(110) interface in the submonolayer coverages perormed in the semiempirical TB scheme. Iterface states arising from the incomplete bonding of Sb atoms to the substarte apepar in the band gap; such states can be prsent also at higher coverages when some disorder exists, evidentiating a general mechanism for fermi lev pinning at the interface
THEORETICAL INVESTIGATION OF THE FERMI LEVEL PINNING AT THE SB-GAAS(110) INTERFACE / Manghi, Franca; CALANDRA BUONAURA, Carlo. - In: VACUUM. - ISSN 0042-207X. - STAMPA. - 41:(1990), pp. 693-694.
THEORETICAL INVESTIGATION OF THE FERMI LEVEL PINNING AT THE SB-GAAS(110) INTERFACE
MANGHI, Franca;CALANDRA BUONAURA, Carlo
1990
Abstract
We present the results of theoretical calculation of the electronic structure of the Sb-GaAs(110) interface in the submonolayer coverages perormed in the semiempirical TB scheme. Iterface states arising from the incomplete bonding of Sb atoms to the substarte apepar in the band gap; such states can be prsent also at higher coverages when some disorder exists, evidentiating a general mechanism for fermi lev pinning at the interface
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