We report on the pulsed and RF power measurements of passivated GaN HEMTs obtained by two different gate evaporation process. Due to the SiN lateral overetch prior to the gate metalization step, devices with a self-aligned gate evaporation showed larger dispersion with respect to those where an angled evaporation was performed. The poorer performances of the self-aligned devices have to be related to the surface regions that are not covered by the gate metal, and that have been exposed to the SiN CF4/O2 dry etch process.

Effect of CF4/O2 plasma damage on AlGaN/GaN HEMTs / Chini, Alessandro; Peroni, M.; Romanini, P.; Lanzieri, C.; Teppati, V.; Camarchia, V.; Passaseo, A.; Verzellesi, Giovanni. - STAMPA. - (2005). (Intervento presentato al convegno 14th International Workshop on Heterostructure Technology HETECH 2005 tenutosi a Smolenice Castle (Slovakia) nel 2-5 October 2005).

Effect of CF4/O2 plasma damage on AlGaN/GaN HEMTs

CHINI, Alessandro;VERZELLESI, Giovanni
2005

Abstract

We report on the pulsed and RF power measurements of passivated GaN HEMTs obtained by two different gate evaporation process. Due to the SiN lateral overetch prior to the gate metalization step, devices with a self-aligned gate evaporation showed larger dispersion with respect to those where an angled evaporation was performed. The poorer performances of the self-aligned devices have to be related to the surface regions that are not covered by the gate metal, and that have been exposed to the SiN CF4/O2 dry etch process.
2005
14th International Workshop on Heterostructure Technology HETECH 2005
Smolenice Castle (Slovakia)
2-5 October 2005
Chini, Alessandro; Peroni, M.; Romanini, P.; Lanzieri, C.; Teppati, V.; Camarchia, V.; Passaseo, A.; Verzellesi, Giovanni
Effect of CF4/O2 plasma damage on AlGaN/GaN HEMTs / Chini, Alessandro; Peroni, M.; Romanini, P.; Lanzieri, C.; Teppati, V.; Camarchia, V.; Passaseo, A.; Verzellesi, Giovanni. - STAMPA. - (2005). (Intervento presentato al convegno 14th International Workshop on Heterostructure Technology HETECH 2005 tenutosi a Smolenice Castle (Slovakia) nel 2-5 October 2005).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/595176
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