The optimization of a field plated pHEMT structure has been presented. It has been shown that by optimizing the FP length (LFP) and the SiN layer thickness the off-state breakdown voltage can be improved as much as four times for the selected pHEMT structure. Choosing the right SiN thickness (in this case in the 40-60nm range) and LFP (in this case in the 0.8-1.2um range) is crucial in order to obtain a significant benefit in the device off-state breakdown.
Off-state breakdown optimization in field plated GaAs-pHEMTs by means of two-dimensional numerical simulation / Chini, Alessandro; Verzellesi, Giovanni. - STAMPA. - (2006). (Intervento presentato al convegno 15th International Workshop on Heterostructure Technology HETECH 2006 tenutosi a Manchester (UK) nel 1-4 October 2006).
Off-state breakdown optimization in field plated GaAs-pHEMTs by means of two-dimensional numerical simulation
CHINI, Alessandro;VERZELLESI, Giovanni
2006
Abstract
The optimization of a field plated pHEMT structure has been presented. It has been shown that by optimizing the FP length (LFP) and the SiN layer thickness the off-state breakdown voltage can be improved as much as four times for the selected pHEMT structure. Choosing the right SiN thickness (in this case in the 40-60nm range) and LFP (in this case in the 0.8-1.2um range) is crucial in order to obtain a significant benefit in the device off-state breakdown.
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