As well Know, the dielectric matrix of air-fireable thick-film resistors(TFRs) presently used in hybrid microelectronics and passive components invariably consists in hifh-lead silicate glass. However the actual trend is to restrict and possibly eleiminate Pb from electronic components. Attempts to develop suita. RuO2-based or pyrochlore ruthenate-based Pb-Cd free TFRs has been only partiallt successful till now. We report here the preliminary results of a study aimed to investigate the flexibility of CaRuO3 perovskite-based lead-free TFRs. The results show that sheet resistances larger than 1 KOhm/square cab be easily achieved in a controlled way, with hot temperature coefficient of resistance in the the range of a few hundreds ppm/deg.C. In addition, the resistors do not exhibit negative structural features, like bleeding or devitrification, observed in previous attempts to develop reliable lead-free TFRs.

Perovskite ruthenate-based lead free thick film resistores / Prudenziati, Maria; Morten, Bruno; S., Rane. - STAMPA. - 2:(2004), pp. 277-282. (Intervento presentato al convegno European microelectronics and packaging symposium tenutosi a Praga nel June 16-18).

Perovskite ruthenate-based lead free thick film resistores

PRUDENZIATI, Maria;MORTEN, Bruno;
2004

Abstract

As well Know, the dielectric matrix of air-fireable thick-film resistors(TFRs) presently used in hybrid microelectronics and passive components invariably consists in hifh-lead silicate glass. However the actual trend is to restrict and possibly eleiminate Pb from electronic components. Attempts to develop suita. RuO2-based or pyrochlore ruthenate-based Pb-Cd free TFRs has been only partiallt successful till now. We report here the preliminary results of a study aimed to investigate the flexibility of CaRuO3 perovskite-based lead-free TFRs. The results show that sheet resistances larger than 1 KOhm/square cab be easily achieved in a controlled way, with hot temperature coefficient of resistance in the the range of a few hundreds ppm/deg.C. In addition, the resistors do not exhibit negative structural features, like bleeding or devitrification, observed in previous attempts to develop reliable lead-free TFRs.
2004
European microelectronics and packaging symposium
Praga
June 16-18
2
277
282
Prudenziati, Maria; Morten, Bruno; S., Rane
Perovskite ruthenate-based lead free thick film resistores / Prudenziati, Maria; Morten, Bruno; S., Rane. - STAMPA. - 2:(2004), pp. 277-282. (Intervento presentato al convegno European microelectronics and packaging symposium tenutosi a Praga nel June 16-18).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/465892
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