A new simple model for electron tunnel injection into oxides has been proposed, alternative to the conventional Fowler-Nordheim expression. The latter fails to predict oscillations in the current-voltage curves in ultra-thin oxides, due to the limits of the WKB approximation. Our model nicely fits the experimental I-V results and can be used to investigate ultra-thin film characteristics. Finnaly, we propose an empirical law correlating oxide thickness to I-V oscillation period.
A new model for tunnelling conduction in ultra-thin dielectrics / Larcher, Luca; A., Paccagnella; A., Scarpa; G., Ghidini. - STAMPA. - (1998), pp. 316-319. (Intervento presentato al convegno Solid-State Device Research Conference, 1998. Proceeding of the 28th European tenutosi a Bordeaux (France) nel 8-10 September 1998).
A new model for tunnelling conduction in ultra-thin dielectrics
LARCHER, Luca;
1998
Abstract
A new simple model for electron tunnel injection into oxides has been proposed, alternative to the conventional Fowler-Nordheim expression. The latter fails to predict oscillations in the current-voltage curves in ultra-thin oxides, due to the limits of the WKB approximation. Our model nicely fits the experimental I-V results and can be used to investigate ultra-thin film characteristics. Finnaly, we propose an empirical law correlating oxide thickness to I-V oscillation period.
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