Transient Phenomena in GaAs and GaN Devices are reviewed focusing on the physical mechanisms limiting their performance. Device characterization by means of Electroluminescence and Emission Spectroscopy techniques are also presented.
Transient Phenomena in GaAs and GaN Devices, including Electroluminescence and Emission Spectroscopy, for Future THz Applications / Chini, Alessandro; Verzellesi, Giovanni; Meneghesso, G.; Zanoni, E.. - (2006). (Intervento presentato al convegno “WS6 (EuMIC/EUMC), Terahertz Devices, Design, Modelling and Characterisation” Tutorial at European Microwave Week 2006 tenutosi a Manchester, UK nel 10-15 September 2006).
Transient Phenomena in GaAs and GaN Devices, including Electroluminescence and Emission Spectroscopy, for Future THz Applications
CHINI, Alessandro;VERZELLESI, Giovanni;
2006
Abstract
Transient Phenomena in GaAs and GaN Devices are reviewed focusing on the physical mechanisms limiting their performance. Device characterization by means of Electroluminescence and Emission Spectroscopy techniques are also presented.File | Dimensione | Formato | |
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