Conduction and noise properties of potassium ions in the KcsA membrane channel are analysed by means of a combined Molecular Dynamics-Monte Carlo numerical approach. The high-voltage part of the experimental I(V) charac-teristics shows a tendency to level off which is reproduced by computational re-sults using a conduction model quite sensitive to the particular set of transition probabilities among the relevant ion occupancy configurations. Noise power spec-tra confirm the existence of correlation between consecutive ion exits from the channel.

Physical Mechanisms for ion-current levelling off in the KcsA channel through combined Monte Carlo/Molecular Dynamics simulations / E., Piccinini; A., Affinito; Brunetti, Rossella; Jacoboni, Carlo; AND M., Rudan. - STAMPA. - 110:(2006), pp. 217-220. ((Intervento presentato al convegno XIV Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors tenutosi a Chicago nel 25-29 july.

Physical Mechanisms for ion-current levelling off in the KcsA channel through combined Monte Carlo/Molecular Dynamics simulations

BRUNETTI, Rossella;JACOBONI, Carlo;
2006

Abstract

Conduction and noise properties of potassium ions in the KcsA membrane channel are analysed by means of a combined Molecular Dynamics-Monte Carlo numerical approach. The high-voltage part of the experimental I(V) charac-teristics shows a tendency to level off which is reproduced by computational re-sults using a conduction model quite sensitive to the particular set of transition probabilities among the relevant ion occupancy configurations. Noise power spec-tra confirm the existence of correlation between consecutive ion exits from the channel.
XIV Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors
Chicago
25-29 july
110
217
220
E., Piccinini; A., Affinito; Brunetti, Rossella; Jacoboni, Carlo; AND M., Rudan
Physical Mechanisms for ion-current levelling off in the KcsA channel through combined Monte Carlo/Molecular Dynamics simulations / E., Piccinini; A., Affinito; Brunetti, Rossella; Jacoboni, Carlo; AND M., Rudan. - STAMPA. - 110:(2006), pp. 217-220. ((Intervento presentato al convegno XIV Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors tenutosi a Chicago nel 25-29 july.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/464176
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