Results are presented of a new calculation of the surface states at the (110) surface of GaAs. By using Koster-Slater parameters fitted to bulk optical and photoemission data, the surface band structure has been calculated with a LCAO method. The main conclusion is the existence of two surface bands, one inside the band gap at about 1 eV from the top of the valence band and the other a few tenths of an eV below it. The results show good agreement with the available experimental data.

Surface States of the (110) Surface of GaAs / C., Calandra; Santoro, Giorgio. - In: JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS. - ISSN 0022-3719. - STAMPA. - 8:(1975), pp. L86-L89.

Surface States of the (110) Surface of GaAs

SANTORO, Giorgio
1975

Abstract

Results are presented of a new calculation of the surface states at the (110) surface of GaAs. By using Koster-Slater parameters fitted to bulk optical and photoemission data, the surface band structure has been calculated with a LCAO method. The main conclusion is the existence of two surface bands, one inside the band gap at about 1 eV from the top of the valence band and the other a few tenths of an eV below it. The results show good agreement with the available experimental data.
8
L86
L89
Surface States of the (110) Surface of GaAs / C., Calandra; Santoro, Giorgio. - In: JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS. - ISSN 0022-3719. - STAMPA. - 8:(1975), pp. L86-L89.
C., Calandra; Santoro, Giorgio
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/458887
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