A doped semiconductor double-quantum-dot molecule is proposed as a qubit realization. The quantum information is encoded in the electron spin, thus benefiting from the long relevant decoherence times; the enhanced flexibility of the molecular structure allows one to map the spin degrees of freedom onto the orbital ones and vice versa and opens the possibility for high-finesse (conditional and unconditional) quantum gates by means of stimulated Raman adiabatic passages.

High-Finesse Optical Quantum Gates for Electron Spins in Artificial Molecules / TROIANI, Filippo; U., HOHENESTER; MOLINARI, Elisa. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 90:(2003), pp. 206802-206805.

High-Finesse Optical Quantum Gates for Electron Spins in Artificial Molecules

TROIANI, Filippo;MOLINARI, Elisa
2003

Abstract

A doped semiconductor double-quantum-dot molecule is proposed as a qubit realization. The quantum information is encoded in the electron spin, thus benefiting from the long relevant decoherence times; the enhanced flexibility of the molecular structure allows one to map the spin degrees of freedom onto the orbital ones and vice versa and opens the possibility for high-finesse (conditional and unconditional) quantum gates by means of stimulated Raman adiabatic passages.
90
206802
206805
High-Finesse Optical Quantum Gates for Electron Spins in Artificial Molecules / TROIANI, Filippo; U., HOHENESTER; MOLINARI, Elisa. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 90:(2003), pp. 206802-206805.
Troiani, Filippo; U., Hohenester; Molinari, Elisa
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/454991
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