A doped semiconductor double-quantum-dot molecule is proposed as a qubit realization. The quantum information is encoded in the electron spin, thus benefiting from the long relevant decoherence times; the enhanced flexibility of the molecular structure allows one to map the spin degrees of freedom onto the orbital ones and vice versa and opens the possibility for high-finesse (conditional and unconditional) quantum gates by means of stimulated Raman adiabatic passages.
High-Finesse Optical Quantum Gates for Electron Spins in Artificial Molecules / TROIANI, Filippo; U., HOHENESTER; MOLINARI, Elisa. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 90:(2003), pp. 206802-206805.
High-Finesse Optical Quantum Gates for Electron Spins in Artificial Molecules
TROIANI, Filippo;MOLINARI, Elisa
2003
Abstract
A doped semiconductor double-quantum-dot molecule is proposed as a qubit realization. The quantum information is encoded in the electron spin, thus benefiting from the long relevant decoherence times; the enhanced flexibility of the molecular structure allows one to map the spin degrees of freedom onto the orbital ones and vice versa and opens the possibility for high-finesse (conditional and unconditional) quantum gates by means of stimulated Raman adiabatic passages.
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