The effect of electron irradiation on the surface chemical composition and the photoluminescence (PL) properties of p-Si samples is investigated. Under the irradiation conditions considered in this study, no significant change in the surface chemistry takes place while the PL intensity is found to increase.
Electron Bombardment Effects on Light Emitting Porous Silicon / L., Calliari; M., Anderle; M., Ceschini; L., Pavesi; G., Mariotto; Bisi, Olmes. - In: JOURNAL OF LUMINESCENCE. - ISSN 0022-2313. - STAMPA. - 57:(1993), pp. 83-87.
Electron Bombardment Effects on Light Emitting Porous Silicon
BISI, Olmes
1993
Abstract
The effect of electron irradiation on the surface chemical composition and the photoluminescence (PL) properties of p-Si samples is investigated. Under the irradiation conditions considered in this study, no significant change in the surface chemistry takes place while the PL intensity is found to increase.
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