We propose a novel numerical procedure to calculate the hot-carrier thermal conductivity in bulk semiconductors. The method is based on combining Monte Carlo and hydrodynamic simulations of carrier transport in submicron inhomogeneous structures. Application to a Si structure indicates a decrease over one order of magnitude of the thermal conductivity of electrons at electric fields over , in close agreement with recent results obtained within the correlation-function formalism.
Calculation of Hot-Carrier Thermal Conductivity from the Simulation of Submicron Semiconductor Structures / Golinelli, P.; Brunetti, Rossella; Varani, L.; Reggiani, L.; Starikov, E.; Shiktorov, P.; Gruzinskis, V.; Gonzales, T.; Martin, M. J.; Pardo, D.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - STAMPA. - 12:(1997), pp. 1511-1513.
Calculation of Hot-Carrier Thermal Conductivity from the Simulation of Submicron Semiconductor Structures
BRUNETTI, Rossella;
1997
Abstract
We propose a novel numerical procedure to calculate the hot-carrier thermal conductivity in bulk semiconductors. The method is based on combining Monte Carlo and hydrodynamic simulations of carrier transport in submicron inhomogeneous structures. Application to a Si structure indicates a decrease over one order of magnitude of the thermal conductivity of electrons at electric fields over , in close agreement with recent results obtained within the correlation-function formalism.
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