A novel ensemble Monte Carlo algorithm has been developed to simulate nonequilibrium phonon effects in the transient and steady-state high-field conductivity of bulk n-GaAs. The interplay of the electronic intervalley transfer with the mutual drag and heating between the carriers and longitudinal optical phonons is demonstrated over a wide range of fields, temperatures and carrier densities.For the moderately high doping levels of practical interest the characteristic times for a strong phonon amplification turn out to be sufficiently long to prevent a substantial interference of phonon disturbances with the onset of valley transfer during overshoot, but modifications of up to 20 percent are found for the steady-state velocity, with a gradual change from an enhancement at low fields to a comparable decrease around the maximum and negative differential part of the velocity-field characteristics.Comparable nonequilibrium-phonon effects are found for the case of negligible (i.e. remote) ionized-impurity scattering as realized in various GaAs-based heterostructures.

Transient hot-phonon effects on the velocity overshoot of GaAs: a Monte Carlo analysis / M., Rieger; P., Kocevar; Bordone, Paolo; P., Lugli; L., Reggiani. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 31:(1988), pp. 687-690.

Transient hot-phonon effects on the velocity overshoot of GaAs: a Monte Carlo analysis

BORDONE, Paolo;
1988

Abstract

A novel ensemble Monte Carlo algorithm has been developed to simulate nonequilibrium phonon effects in the transient and steady-state high-field conductivity of bulk n-GaAs. The interplay of the electronic intervalley transfer with the mutual drag and heating between the carriers and longitudinal optical phonons is demonstrated over a wide range of fields, temperatures and carrier densities.For the moderately high doping levels of practical interest the characteristic times for a strong phonon amplification turn out to be sufficiently long to prevent a substantial interference of phonon disturbances with the onset of valley transfer during overshoot, but modifications of up to 20 percent are found for the steady-state velocity, with a gradual change from an enhancement at low fields to a comparable decrease around the maximum and negative differential part of the velocity-field characteristics.Comparable nonequilibrium-phonon effects are found for the case of negligible (i.e. remote) ionized-impurity scattering as realized in various GaAs-based heterostructures.
1988
31
687
690
Transient hot-phonon effects on the velocity overshoot of GaAs: a Monte Carlo analysis / M., Rieger; P., Kocevar; Bordone, Paolo; P., Lugli; L., Reggiani. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 31:(1988), pp. 687-690.
M., Rieger; P., Kocevar; Bordone, Paolo; P., Lugli; L., Reggiani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/421738
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