We investigate the dependence of the average interface field on the inversion and depletion charge density through the use of a zero-temperature Green's function formalism for the evaluation of the broadening of the electronic states and conductivity. Various models for the surface-roughness autocovariance function existing in the literature, including both Gaussian and exponential models, are studied in our calculations. Besides surface-roughness scattering, the dominant scattering mechanism at high electron densities, charged impurity, interface-trap and oxide charge scattering are also included. The position of the subband minima, as well as the electron wave functions, are obtained by a self-consistent solution of the Schrödinger, Poisson, and Dyson equations for each value of the inversion charge density. Many-body effects are included by considering the screened matrix elements for the scattering mechanisms and through inclusion of the exchange-correlation term. The dependence of the mobility and the effective field upon the inversion charge density is sensitive to the model chosen, and we discuss the manner in which this may be used to study the interface itself.

Calculation of the average interface field in inversion layers using zero-temperature Green's function formalism / D., Vasileska Kafedziska; Bordone, Paolo; T., Eldridge; D. K., Ferry. - In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B. - ISSN 1071-1023. - STAMPA. - 13:(1995), pp. 1841-1847.

Calculation of the average interface field in inversion layers using zero-temperature Green's function formalism

BORDONE, Paolo;
1995-01-01

Abstract

We investigate the dependence of the average interface field on the inversion and depletion charge density through the use of a zero-temperature Green's function formalism for the evaluation of the broadening of the electronic states and conductivity. Various models for the surface-roughness autocovariance function existing in the literature, including both Gaussian and exponential models, are studied in our calculations. Besides surface-roughness scattering, the dominant scattering mechanism at high electron densities, charged impurity, interface-trap and oxide charge scattering are also included. The position of the subband minima, as well as the electron wave functions, are obtained by a self-consistent solution of the Schrödinger, Poisson, and Dyson equations for each value of the inversion charge density. Many-body effects are included by considering the screened matrix elements for the scattering mechanisms and through inclusion of the exchange-correlation term. The dependence of the mobility and the effective field upon the inversion charge density is sensitive to the model chosen, and we discuss the manner in which this may be used to study the interface itself.
13
1841
1847
Calculation of the average interface field in inversion layers using zero-temperature Green's function formalism / D., Vasileska Kafedziska; Bordone, Paolo; T., Eldridge; D. K., Ferry. - In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B. - ISSN 1071-1023. - STAMPA. - 13:(1995), pp. 1841-1847.
D., Vasileska Kafedziska; Bordone, Paolo; T., Eldridge; D. K., Ferry
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/421396
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 10
  • ???jsp.display-item.citation.isi??? 8
social impact