Single ions impacting on SiO2 layers generate tracks of defects which may result in a Radiation Induced Leakage Current (RILC). This current is usually studied as the cumulative effect of ion-induced defects in capacitors with ultra-thin oxides. We are demonstrating and modeling this phenomenon in 10 nm oxides by using Floating Gate memories. The impact of a single, high-LET ion can result in severe retention problems, due to several electrically active defects, which cooperate to slowly discharge the FG. We are also proposing innovative simulation tools to reproduce this phenomenon. Results from simulations fully explain our results, and also agree with existing data on thinner (4 nm) oxides.
Radiation induced leakage current in floating gate memory cells / G., Cellere; Larcher, Luca; A., Paccagnella; A., Visconti; M., Bonanomi. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 52:6(2005), pp. 2144-2152. (Intervento presentato al convegno IEEE Nuclear & Space Radiation Effects Conference (IEEE-NSREC) tenutosi a Seattle (USA) nel July 2005) [10.1109/TNS.2005.860725].
Radiation induced leakage current in floating gate memory cells
LARCHER, Luca;
2005
Abstract
Single ions impacting on SiO2 layers generate tracks of defects which may result in a Radiation Induced Leakage Current (RILC). This current is usually studied as the cumulative effect of ion-induced defects in capacitors with ultra-thin oxides. We are demonstrating and modeling this phenomenon in 10 nm oxides by using Floating Gate memories. The impact of a single, high-LET ion can result in severe retention problems, due to several electrically active defects, which cooperate to slowly discharge the FG. We are also proposing innovative simulation tools to reproduce this phenomenon. Results from simulations fully explain our results, and also agree with existing data on thinner (4 nm) oxides.
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