The core of the EEPROM memory cell is the tunnel oxide grown on an n(+) implant named capacitor implant which also electrically connects the cell drain. Different implant doses have been performed to optimize the cell junction characteristics in a 0.35 mum EEPROM technology. The impact on the quality and electrical characteristics of the tunnel oxide is hereafter analyzed. Furthermore, a modeling is presented, giving estimation of the oxide thickness and substrate superficial doping with a good correlation of these last values with SIMS measurements. As expected, a linear relation between the implant dose and the superficial doping has been found. (C) 2001 Elsevier Science Ltd. All rights reserved.

Impact of the As dose in 0.35 mu m EEPROM technology: characterization and modeling / N., Galbiati; G., Ghidini; C., Cremonesi; Larcher, Luca. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 41:(2001), pp. 999-1002.

Impact of the As dose in 0.35 mu m EEPROM technology: characterization and modeling

LARCHER, Luca
2001

Abstract

The core of the EEPROM memory cell is the tunnel oxide grown on an n(+) implant named capacitor implant which also electrically connects the cell drain. Different implant doses have been performed to optimize the cell junction characteristics in a 0.35 mum EEPROM technology. The impact on the quality and electrical characteristics of the tunnel oxide is hereafter analyzed. Furthermore, a modeling is presented, giving estimation of the oxide thickness and substrate superficial doping with a good correlation of these last values with SIMS measurements. As expected, a linear relation between the implant dose and the superficial doping has been found. (C) 2001 Elsevier Science Ltd. All rights reserved.
41
999
1002
Impact of the As dose in 0.35 mu m EEPROM technology: characterization and modeling / N., Galbiati; G., Ghidini; C., Cremonesi; Larcher, Luca. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 41:(2001), pp. 999-1002.
N., Galbiati; G., Ghidini; C., Cremonesi; Larcher, Luca
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/307264
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