The core of the EEPROM memory cell is the tunnel oxide grown on an n(+) implant named capacitor implant which also electrically connects the cell drain. Different implant doses have been performed to optimize the cell junction characteristics in a 0.35 mum EEPROM technology. The impact on the quality and electrical characteristics of the tunnel oxide is hereafter analyzed. Furthermore, a modeling is presented, giving estimation of the oxide thickness and substrate superficial doping with a good correlation of these last values with SIMS measurements. As expected, a linear relation between the implant dose and the superficial doping has been found. (C) 2001 Elsevier Science Ltd. All rights reserved.
Impact of the As dose in 0.35 mu m EEPROM technology: characterization and modeling / N., Galbiati; G., Ghidini; C., Cremonesi; Larcher, Luca. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 41(2001), pp. 999-1002.
Data di pubblicazione: | 2001 | |
Titolo: | Impact of the As dose in 0.35 mu m EEPROM technology: characterization and modeling | |
Autore/i: | N., Galbiati; G., Ghidini; C., Cremonesi; Larcher, Luca | |
Autore/i UNIMORE: | ||
Rivista: | ||
Volume: | 41 | |
Pagina iniziale: | 999 | |
Pagina finale: | 1002 | |
Codice identificativo ISI: | WOS:000170409100014 | |
Codice identificativo Scopus: | 2-s2.0-0035394047 | |
Citazione: | Impact of the As dose in 0.35 mu m EEPROM technology: characterization and modeling / N., Galbiati; G., Ghidini; C., Cremonesi; Larcher, Luca. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 41(2001), pp. 999-1002. | |
Tipologia | Articolo su rivista |
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